Backside integration of RF filters for RF front end modules and design structure

ABSTRACT

A design structure for an integrated radio frequency (RF) filter on a backside of a semiconductor substrate includes: a device on a first side of a substrate; a radio frequency (RF) filter on a backside of the substrate; and at least one substrate conductor extending from the front side of the substrate to the backside of the substrate and electrically coupling the RF filter to the device.

FIELD OF THE INVENTION

The invention relates to semiconductor structures and methods ofmanufacture and, more particularly, to design structures for anintegrated radio frequency (RF) filter on a backside of a semiconductorsubstrate upon which devices are formed on an opposite front side andassociated structures and methods of manufacture.

BACKGROUND

Radio frequency (RF) filters are used in wireless communication systems.Two types of RF filters are Surface Acoustic Wave (SAW) filters and BulkAcoustic Wave (BAW) filters. A SAW filter typically comprises a pair ofinterdigitated electrical conductive traces formed on a surface of apiezoelectric material. A BAW filter typically comprises a piezoelectricmaterial sandwiched between two electrodes and acoustically isolatedfrom the surrounding medium. SAW filters are generally used atrelatively lower frequencies, e.g., below 2.5 GHz, whereas BAW filtersare generally used at relatively higher frequencies, e.g., above 2.5GHz. SAW and BAW devices may be formed and subsequently attached to asubstrate or circuit board using, e.g., flip chip techniques.

Alternatively, SAW and BAW devices may be incorporated into anintegrated circuit (IC) chip at the wafer level, e.g., during CMOS(complementary metal oxide semiconductor) processing. The latterapproach, i.e., forming RF filters at the wafer level during CMOSprocessing, eliminates the need for additional chips. However,integrating RF filters, including SAW and BAW filters, at the waferlevel during CMOS processing is difficult due at least in part to thefabrication scale on monolithic devices.

Accordingly, there exists a need in the art to overcome the deficienciesand limitations described hereinabove.

SUMMARY

In a first aspect of the invention, a method includes providing a radiofrequency (RF) filter at a backside of a substrate. The method alsoincludes forming at least one substrate conductor through the substrate,wherein the at least one substrate conductor electrically couples the RFfilter to at least one device at a front side of the substrate.

In another aspect of the invention a method includes forming a device ona front side of a substrate. The method also includes forming aninsulator layer at the front side of the substrate and covering thedevice. The method also includes forming a through-silicon-via (TSV)extending entirely through the substrate and the insulator layer. Themethod also includes forming a radio frequency (RF) filter on a backsideof the substrate opposite the front side of the substrate. The methodalso includes forming an encapsulating seal around the RF filter at thebackside of the substrate. The TSV electrically couples the RF filter tothe device.

In yet another aspect of the invention, a semiconductor structureincludes a device on a first side of a substrate. The structure alsoincludes a radio frequency (RF) filter on a backside of the substrate.The structure also includes at least one substrate conductor extendingfrom the front side of the substrate to the backside of the substrateand electrically coupling the RF filter to the device.

In another aspect of the invention, there is a method in acomputer-aided design system for generating a functional design model ofan RF filter. The method includes generating a functional representationof a device on a first side of a substrate. The method also includesgenerating a functional representation of a radio frequency (RF) filteron a backside of the substrate. The method also includes generating afunctional representation of at least one substrate conductor extendingfrom the front side of the substrate to the backside of the substrateand electrically coupling the RF filter to the device.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The present invention is described in the detailed description whichfollows, in reference to the noted plurality of drawings by way ofnon-limiting examples of exemplary embodiments of the present invention.

FIGS. 1-33 show processing steps and respective structures in accordancewith additional aspects of the invention; and

FIG. 34 is a flow diagram of a design process used in semiconductordesign, manufacture, and/or test.

DETAILED DESCRIPTION

The invention relates to semiconductor structures and methods ofmanufacture and, more particularly, to a design structure for anintegrated radio frequency (RF) filter on a backside of a semiconductorsubstrate upon which devices are formed on an opposite front side andassociated structures and methods of manufacture. According to aspectsof the invention, an RF filter, such as a band-pass SAW or BAW filter,is formed on the backside of a semiconductor substrate. Other devices,such as transistors included in RF modules, are formed on a front sideof the substrate opposite the backside. At least one conductor, such asa through-silicon-via (TSV), is arranged through the substrate toprovide electrical communication between the RF filter on the backsideand the other devices on the front side. In embodiments, the RF filteris integrated at the wafer level, e.g., is completely formed on thebackside of the substrate using CMOS processing. In this manner, spacesavings may be achieved by utilizing the backside of the substrate.

FIGS. 1-33 show processing steps and respective structures in accordancewith additional aspects of the invention. In particular, FIG. 1 shows across section of a portion of a semiconductor structure 5 that hasundergone CMOS processing. The semiconductor structure 5 may comprise asubstrate 10. The substrate 10 may be composed of any suitable materialor combination of materials, such as doped or undoped silicon, glass,etc. FIG. 1 further shows a semiconductor-on-insulator (SOI)configuration in which a buried insulator layer 15 is formed on thesubstrate 10, and a semiconductor layer 20 is formed on the buriedinsulator layer 15. The buried insulator layer 15 and semiconductorlayer 20 may be composed of any suitable materials, such as oxide andsilicon, respectively.

Devices 25 may be active devices such as field effect transistors (FETs)and may be formed on the semiconductor layer 20, and isolation regions30 such as shallow trench isolation (STI) may be selectively arrangedwithin the semiconductor layer 20, e.g., between the devices 25.Although an SOI configuration is shown, it is understood that thedevices 25 may equally be arranged on a bulk material substrate, e.g.,with appropriately doped regions typically referred to as wells. Thesubstrate 10, buried insulator layer 15, semiconductor layer 20, devices25, and isolation regions 30 may be formed using conventionalsemiconductor manufacturing processes and materials.

In embodiments, the devices 25 are formed on a first side of thesubstrate 10 referred to herein as the front side 33 of the substrate10. The substrate 10 also includes a second side opposite the first sidereferred to herein as a backside 34. In embodiments, one or more of thedevices 25 on the front side 33 are included in an RF module that isusable, for example, in wireless communications.

Still referring to FIG. 1, the semiconductor structure 5 may alsocomprise an insulator layer 35 formed over the devices 25 andsemiconductor layer 20, and contacts 40 formed in the insulator layer35. The insulator layer 35 may be composed of any suitable electricalinsulator material, and the contacts 40 may be composed of any suitableelectrically conductive material. The insulator layer 35 and thecontacts 40 may be formed using conventional semiconductor manufacturingprocesses and materials. The contacts 40 are structured and arranged toprovide electrical communication pathways to the devices 25, as isunderstood to those of ordinary skill in the art such that furtherexplanation is not necessary.

As depicted in FIG. 2, at least one substrate conductor 45 is formedthrough the substrate 10, e.g., extending from the front side 33 to thebackside 34. A first substrate conductor 45 a and second substrateconductor 45 b are shown in FIG. 2, although any suitable number ofsubstrate conductors may be used within the scope of the presentinvention. In embodiments, the first substrate conductor 45 a and secondsubstrate conductor 45 b each pass entirely through the substrate 10, aswell as buried insulator layer 15, and semiconductor layer 20. Inadditional embodiments, the first substrate conductor 45 a and secondsubstrate conductor 45 b each pass through the insulator layer 35 inaddition to the substrate 10.

The first substrate conductor 45 a and second substrate conductor 45 bmay each comprise, for example, a respective through-silicon-via (TSV)(also referred to as a through-substrate-via) formed using semiconductormanufacturing processes including masking, etching, and deposition. Forexample, in forming the first substrate conductor 45 a and secondsubstrate conductor 45 b, a photomask may provided by forming a layer ofphotoresist material on the insulator layer 35, exposing the photoresistmaterial to a pattern of light, and developing the exposed photoresistmaterial. An etching process, such as one or more reactive ion etch(RIE) processes, may then be used to form patterns (e.g., openings)extending from the top surface of the insulator layer 35 to the backside34 of the substrate 10 (e.g., through the insulator layer 35,semiconductor layer 20 and/or isolation regions 30, buried insulatorlayer 15, and substrate 10) by removing material not covered by thephotomask. After etching, the photomask may be removed using aconventional ashing or stripping process.

A first deposition process, such as chemical vapor deposition (CVD) oratomic layer deposition (ALD), may then be used to line the patterns(openings) with a film 50 of electrical insulator material, such as, forexample, SiO₂. A second deposition process, such as CVD, ALD, sputterdeposition, or electroplating (or combinations of these), may then beused to fill the remainder (e.g., central portion, core, etc.) of thepatterns (openings) with a electrically conductive material 55including, e.g., copper (Cu) or other suitable material. A planarizationprocess, such as chemical mechanical polish (CMP), may be used to removematerial from the top surface of the structure and/or the backside 34 ofthe substrate 10 to form substantially planar surfaces.

As shown in FIG. 3, any number and arrangement of electricallyconductive elements 60, such as wires, vias, and/or interconnects, maybe formed in one or more interlevel dielectric (ILD) layers 65 over theinsulator layer 35. In embodiments, at least one of the conductiveelements (e.g., 60 a) directly contacts and forms an electricallyconductive pathway between: (i) the conductive material 55 of one of thesubstrate conductors (e.g., first substrate conductor 45 a) and (ii) acontact 40 associated with one of the devices 25. The conductiveelements 60 and ILD layers 65 may be formed using conventionalsemiconductor manufacturing processes and materials such as depositionof material, photolithography and etching processes known to those ofskill in the art, as already described herein.

As shown in FIG. 4, one or more external electrical connections 70 maybe formed on the last wiring level of the semiconductor structure 5,e.g., at the front side 33 and on top of the uppermost portions of theconductive elements 60 and ILD layers 65. For example, a passivationlayer 75 may be formed on the last wiring level of the semiconductorstructure 5, an opening may be formed in the passivation layer 75 toexpose a portion of a conductive element 60 b, a bond pad 80 may beformed in the opening and contacting the portion of a conductive element60 b, and a solder ball 85 may be formed on the bond pad 80. Thepassivation layer 75, bond pad 80, and solder ball 85 may be formedusing conventional semiconductor processing techniques and materials.

FIG. 5 shows CMOS processing at the backside 34 of the semiconductorstructure 5 in accordance with aspects of the invention. In embodiments,a handle wafer 90 is attached to the top surfaces at the front side 33.For example, the handle wafer 90 may comprise a semiconductor or glassmaterial 91 attached to the passivation layer 75 by an adhesive 92, asis understood by those of ordinary skill in the art such that furtherexplanation is not necessary. The handle wafer 90 may be used tore-orient (e.g., flip, rotate, etc.) the semiconductor structure 5 tofacilitate processing at the backside 34.

As depicted in FIG. 5, a backside insulator layer 95 is formed on thebackside 34 of the substrate 10. In embodiments, the backside insulatorlayer 95 is formed by first grinding the backside 34 (e.g., a backsidegrind), recessing a portion of the backside 34 of the substrate 10relative to the first substrate conductor 45 a and second substrateconductor 45 b, and filling the recess with an insulator material. Thebackside 34 may be recessed using, for example, an etch process having achemistry that removes material of the substrate 10 withoutsubstantially removing materials of the first substrate conductor 45 aand second substrate conductor 45 b. For example, when the substratecomprises silicon (Si), the backside 34 may be recessed with an Sirecess etch that is selective to the materials of the first substrateconductor 45 a and second substrate conductor 45 b. The depth of therecess at the backside 34 may be controlled by controlling the durationof the recess etch. After forming the recess, the backside insulatorlayer 95 may be formed by depositing an insulator material, e.g., SiO₂deposited using CVD, in the recess. A polishing process, e.g., CMP, maythen be used to planarize the backside insulator layer 95 and remove anyof the insulator material that was deposited on the first substrateconductor 45 a and second substrate conductor 45 b, i.e., to ensure thatthe conductive material 55 is exposed at the backside 34.

As shown in FIGS. 6 and 7, under-bump metallurgy (UBM) 100 is formed atlocations on the backside insulator layer 95, and solder 105 is formedon the UBM 100. In embodiments, the UBM 100 and solder 105 are formed atfirst locations 115 in contact with the conductive material 55 of thefirst substrate conductor 45 a and second substrate conductor 45 b, andat second locations 120 not in contact with the conductive material 55.In accordance with aspects of the invention, the UBM 100 and solder 105at the first locations 115 provide solder bumps for connecting an RFdevice 125 to the first substrate conductor 45 a and second substrateconductor 45 b. The UBM 100 and solder 105 at the second locations 120provides a solder ring for forming a seal surrounding the solder bumpsat the first locations 115.

FIG. 7 is a plan view along line VII-VII of FIG. 6, and shows the solder105 at the first locations 115 and second locations 120, as well asportions of the backside insulator layer 95. In embodiments, the solder105 at the second locations 120 provides a continuous solder ring (e.g.,in the shape of a polygon, circle, ellipse, oval, etc.) around the firstlocations 115.

The UBM 100 and solder 105 may comprise any suitable materials. Forexample, the UBM 100 may comprise a first layer of titanium-tungsten(TiW) formed on the backside insulator layer 95 and/or conductivematerial 55, and a second layer of gold (Au) formed on the TiW, althoughany other materials may be used. The solder 105 may comprise, forexample, gold (Au) and/or tin (Sn), although any other materials may beused.

The UBM 100 and solder 105 may be formed using any suitable processingtechniques. In a first illustrative example, the UBM 100 is formed bysputtering a blanket layer of TiW on the backside insulator layer 95 andconductive material 55, and sputtering a blanket layer of about 100 nmof Au on the TiW. A resist mask is formed on the Au and patterned toform openings where solder is to be formed, e.g., at the first locations115 and second locations 120. The solder 105 is formed in the openingsin the resist mask by electroplating about 50 nm of Sn on the exposedAu, and then electroplating about 300 nm of Au on the Sn. The resistmask is stripped, and the exposed portions of the UBM 100 are etchedusing a wet etch or dry etch, leaving discrete shapes of UBM 100 andsolder 105 at the first locations 115 and second locations 120. In asecond illustrative example, the UBM 100 and solder 105 are formed byfirst forming a liftoff mask, e.g., a resist material patterned withopenings at the first locations 115 and second locations 120. The UBM100 and solder 105 are formed in the openings of the liftoff mask bysputtering respective layers of material, e.g., TiW/Au/AuSn, etc., inthe openings. The liftoff mask is then stripped, leaving discrete shapesof UBM 100 and solder 105 at the first locations 115 and secondlocations 120.

Still referring to FIG. 6, the RF device 125 may comprise analready-formed band-pass filter 130, such as a SAW filter or BAW filter,arranged on or encapsulated in a polymer or epoxy material 133. The RFdevice 125 may comprise UBM 135 structured and arranged in acorresponding spatial location to the UBM 100 and solder 105. The UBM135 may comprise the same materials as UBM 100, such as TiW/Au, formedusing sputtering, masking, and etching processes as already describedherein.

As shown in FIG. 8, the RF device 125 is bonded to the semiconductorstructure 5 by bringing the UBM 135 into contact with the solder 105 andreflowing the solder 105. In this manner, the RF device 125 is bonded atthe backside 34 of the substrate 10, and the first substrate conductor45 a and second substrate conductor 45 b electrically couple theband-pass filter 130 to the at least one device 25 at the front side 33of the substrate 10. Moreover, the solder 105 at the second locations120 forms a seal around the electrical connections 140 between the RFdevice 125 and the first substrate conductor 45 a and second substrateconductor 45 b. Following bonding the RF device 125 to the semiconductorstructure 5, further processing may be performed, such as removing thehandle wafer 90 (including the material 91 and adhesive 92), applyingdicing tape at the backside 34, and dicing the wafer from the front side33.

FIG. 9 shows an intermediate structure and respective fabrication stepsin accordance with additional aspects of the present invention. Inparticular, FIG. 9 shows a semiconductor structure 5′ that has undergoneCMOS processing similar to the structure shown in FIGS. 1-5. Forexample, the semiconductor structure 5′ of FIG. 9 comprises a substrate10, at least one device 25 at a front side 33 of the substrate 10, abackside insulator layer 95 at a backside 34 of the substrate 10, and afirst substrate conductor 45 a and a second substrate conductor 45 bextending from the front side 33 to the backside 34. Each of the firstsubstrate conductor 45 a and second substrate conductor 45 b comprises aconductive material 55 (e.g., a conductive core) surrounded by aninsulator film 50.

As depicted in FIG. 9, a backside interconnect 160 is formed in thebackside insulator layer 95 and in contact with the conductive material55 of the second substrate conductor 45 b. The backside interconnect 160comprises electrically conductive material and may be formed usingconventional processing techniques. For example, the backsideinterconnect 160 may be formed using photolithographic masking andetching to form a trench (e.g., by etching portions of the backsideinsulator layer 95 and insulator film 50 of the second substrateconductor 45 b), depositing a conductive material in the trench (e.g.,sputter deposition of a seed layer followed by electroplating to depositCu), and performing a CMP process.

As depicted in FIG. 10, a passivation layer 165 is formed on thebackside 34, covering the backside insulator layer 95, backsideinterconnect 160, first substrate conductor 45 a and second substrateconductor 45 b. The passivation layer 165 may comprise any suitablematerials, such as a first layer of SiN and a second layer of SiO₂formed by, e.g., CVD. The passivation layer 165 may be patterned (e.g.,using masking and etching) to form openings 170 (e.g., tapered vias)that expose portions of the backside interconnect 160 and the conductivematerial 55 of the first substrate conductor 45 a.

Still referring to FIG. 10, a UBM 100′ is formed in the openings 170 andon portions of the passivation layer 165. The UBM 100′ may be formed ina manner similar to that described with respect to UBM 100. For example,the UBM 100′ may be formed by sputtering blanket layers of TiW and Auand patterning the layers using masking and etching. As another example,the UBM 100′ may be formed by forming and patterning a liftoff mask,sputtering layers of TiW and Au in the openings in the liftoff mask, andthen stripping the liftoff mask. Similar to UBM 100, the UBM 100′ isformed at first locations 115′ and second locations 120′ that surroundthe first locations 115′. As depicted in FIG. 10, the first locations115′ include the openings 170 in the passivation layer 165 such that theUBM 100′ contacts the backside interconnect 160 and the conductivematerial 55 of the first substrate conductor 45 a. Moreover, the firstlocations 115′ extend outward from the openings 170 such that the UBM100′ continuously extends from the openings 170 to an outer surface ofthe passivation layer 165.

As depicted in FIG. 11, and in accordance with aspects of the invention,an RF device 125′ is bonded to the backside 34 of semiconductorstructure 5′. In embodiments, the RF device 125′ comprises a filter 130′(e.g., a SAW or BAW filter) and UBM 135′ structured to spatiallycorrespond to UBM 100′. The RF device 125′ is bonded to the backside 34of semiconductor structure 5′ by forming solder 105′ on the UBM 100′,bringing the UBM 135′ into contact with the solder 105′ and reflowingthe solder 105′. In this manner, the filter 130′ at the backside 34 iselectrically coupled to at least one device 25 at the front side 33 bythe first substrate conductor 45 a and second substrate conductor 45 b.Subsequent processing may include, e.g., removing the handle wafer anddicing the semiconductor structure 5′ (e.g., wafer).

FIG. 12 shows an intermediate structure and respective fabrication stepsin accordance with additional aspects of the present invention. Inparticular, FIG. 12 shows a semiconductor structure 5″ that hasundergone CMOS processing similar to the structure shown in FIGS. 1-5.For example, the semiconductor structure 5″ of FIG. 12 comprises asubstrate 10, at least one device 25 at a front side 33 of the substrate10, a backside insulator layer 95 at a backside 34 of the substrate 10,and a first substrate conductor 45 a and a second substrate conductor 45b extending from the front side 33 to the backside 34. Each of the firstsubstrate conductor 45 a and second substrate conductor 45 b comprises aconductive material 55 (e.g., a conductive core) surrounded by aninsulator film 50.

As depicted in FIG. 12, the semiconductor structure 5″ also comprises athird substrate conductor 45 c that is similar to and laterally offsetfrom the first substrate conductor 45 a and second substrate conductor45 b. The third substrate conductor 45 c may be formed simultaneously,e.g., using the same processes and materials, as the first substrateconductor 45 a and second substrate conductor 45 b.

As shown in FIG. 13, a bond pad 200 is formed on portions of thebackside insulator layer 95, first substrate conductor 45 a, secondsubstrate conductor 45 b, and third substrate conductor 45 c. The bondpad 200 may comprise any suitable conductive materials, such as layersof Ti, TiN, and Al. Furthermore, a UBM 100″ is formed on the bond pad200. The UBM 100″ may be similar to UBM 100, and may comprise, forexample, layers of TiW and Au. The bond pad 200 and UBM 100″ may beformed using processes already described herein, such as depositingrespective layers of Ti, TiN, Al, TiW, and Au, and patterning the layersusing photolithographic masking and etching. Alternatively, the bond pad200 and UBM 100″ may be formed using a liftoff technique.

Similar to UBM 100, the bond pad 200 and UBM 100″ are formed at firstlocations 115″, and second locations 120″ that surround the firstlocations 115″. In embodiments, the bond pad 200 and UBM 100″ are alsoformed at a third location 205 over the third substrate conductor 45 c.The bond pad 200 contacts the conductive material 55 of the firstsubstrate conductor 45 a and second substrate conductor 45 b at thefirst locations 115″. Moreover, the bond pad 200 contacts the conductivematerial 55 of the third substrate conductor 45 c at the third location205.

As depicted in FIG. 14, and in accordance with aspects of the invention,an RF device 125″ is bonded to the backside 34 of semiconductorstructure 5″. In embodiments, the RF device 125″ comprises a filter 130″(e.g., a SAW or BAW filter) and UBM 135″ structured to spatiallycorrespond to UBM 100″. The RF device 125″ is bonded to the backside 34of semiconductor structure 5″ by forming solder 105″ on the UBM 100″,bringing the UBM 135″ into contact with the solder 105″ and reflowingthe solder 105″. In this manner, the filter 130″ at the backside 34 iselectrically coupled to at least one device 25 at the front side 33 bythe first substrate conductor 45 a and second substrate conductor 45 b.

As depicted in FIG. 15, in embodiments, the UBM 100″ is removed from thebond pad 200 at the third location 205. A dry etch or a sputter etch maybe used to remove the UBM 100″ from the bond pad 200, thereby exposingthe bond pad 200 as an external contact point at the backside 34 of thesemiconductor structure 5″. Subsequent processing may include, e.g.,removing the handle wafer and dicing the semiconductor structure 5″(e.g., wafer).

FIG. 16 shows an intermediate structure and respective fabrication stepsin accordance with additional aspects of the present invention. Inparticular, FIG. 16 shows a semiconductor structure 5′″ that hasundergone CMOS processing similar to the structure shown in FIGS. 1-5.For example, the semiconductor structure 5′″ of FIG. 16 comprises asubstrate 10, at least one device 25 at a front side 33 of the substrate10, a backside insulator layer 95 at a backside 34 of the substrate 10,and a first substrate conductor 45 a and a second substrate conductor 45b extending from the front side 33 to the backside 34. Each of the firstsubstrate conductor 45 a and second substrate conductor 45 b comprises aconductive material 55 (e.g., a conductive core) surrounded by aninsulator film 50.

As depicted in FIG. 16, a piezoelectric material 220 is arranged on thebackside insulator layer 95 at the backside 34 of the substrate 10. Thepiezoelectric material 220 may comprise any suitable material usable ina SAW filter, including, but not limited to zinc oxide (ZnO), zincsulfide (ZnS), aluminum nitride (AlN), lithium tantalate (LiTaO₃) orother members of the lead lanthanum zirconate titanate family. Thepiezoelectric material 220 may be bonded to the backside insulator layer95 using an epoxy and/or polymer adhesive 222, or may be bonded to thesemiconductor structure 5′″ in any other desired manner.

As depicted in FIG. 17, and in accordance with aspects of the invention,a SAW device 225 (e.g., a band-pass SAW filter) comprising electricallyconductive lines 230 is formed on the piezoelectric material 220. Theconductive lines 230 may be arranged in a pattern of a pair ofcomb-shaped electrodes having interdigitated fingers, as is understoodby those of ordinary skill in the art (and depicted in greater detailherein with respect to FIG. 27). The conductive lines 230 may be formedusing conventional semiconductor processing techniques, such asconventional deposition, masking, and etching processes. The conductivelines 230 may be composed of, for example, gold (Au), molybdenum (Mo),tungsten (W), copper (Cu), nickel (Ni), titanium (Ti), Niobium (Nb),silver (Ag), tantalum (Ta), cobalt (Co), aluminum (Al), or otherconductive material.

As further depicted in FIG. 17, a first electrode 235 a is formedextending continuously from the conductive material 55 of the firstsubstrate conductor 45 a to a first one of the combs 240 a defined bythe conductive lines 230. Also, a second electrode 235 b is formedextending continuously from the conductive material 55 of the secondsubstrate conductor 45 a to a second one of the combs 240 b defined bythe conductive lines 230. The first electrode 235 a and second electrode235 b may be formed using conventional semiconductor processingtechniques, such as liftoff masking and deposition. The first electrode235 a and second electrode 235 b may comprise any suitable conductivematerial, such as Al or Cu or other materials.

Still referring to FIG. 17, the semiconductor structure 5′″ mayoptionally include angled (e.g., tapered) sidewall spacers 242 arrangedon the sidewalls of the piezoelectric material 220. The sidewall spacers242 may be composed of any suitable insulator material, such as polymeror nitride, and may be formed using conventional processing techniques.In embodiments, the sidewall spacers 242 are provided to improve thestructural integrity of the first electrode 235 a and second electrode235 b at the sidewalls of the piezoelectric material 220, e.g., bytapering the sharp vertical step otherwise present at the sidewalls ofthe piezoelectric material 220.

As depicted in FIG. 18, the SAW device 225 is hermetically sealed undera glass plate 250 that is bonded to the backside insulator layer 95 witha spacer 255. In embodiments, the spacer 255 surrounds the SAW device225, e.g., forms a continuous perimeter around all lateral sides of theSAW device 225. The spacer 255 may comprise any desired material capableof bonding the glass plate 250 to the backside insulator layer 95, andalso capable of providing a hermetic seal. For example, the spacer 255may comprise a first layer of Au formed by sputter deposition or platingon the backside insulator layer 95, and a second layer of Sn formed bysputter deposition or plating on the first layer of Au. The one or morelayers that make up the spacer 255 may be formed in a ring shape (e.g.,polygon, circular, elliptical, etc.) using conventional liftoff maskingand deposition processes. The glass plate 250 may be bonded to thespacer 255 by bringing the glass plate 250 into physical contact withthe spacer 255 and annealing the structure.

As should now be understood, and as depicted by FIGS. 16-18, the SAWdevice 225 is formed at the backside 34 of the substrate 10, and iselectrically connected to devices 25 at the frontside 33 by the firstsubstrate conductor 45 a and second substrate conductor 45 b.Furthermore, the SAW device 225 is integrated with the semiconductorstructure 5′″ at the wafer level, e.g., is completely formed during CMOSprocessing, rather than being separately formed and externally attachedto a chip after CMOS processing.

FIG. 19 shows an intermediate structure and respective fabrication stepsin accordance with additional aspects of the present invention. Inparticular, FIG. 19 shows the semiconductor structure 5′″ of FIG. 17with a layer 300 of sacrificial material formed on and around (e.g.,encapsulating) the SAW device 225 and also on portions of the backsideinsulator layer 95. The layer 300 of sacrificial material may be used informing an alternative seal around the SAW device 225, rather than theglass plate and spacer shown in FIG. 18. In embodiments, the layer 300of sacrificial material is composed of polymer (e.g., PMGI) or silicon;although other materials are also contemplated by the present invention.The layer 300 of sacrificial material may be formed using conventionalsemiconductor processing techniques, such as CVD, masking, and etching(e.g., for silicon) or masking and spin-on coating (e.g., for polymer).

FIG. 20 shows the formation of a sealing layer 305 on the layer 300 ofsacrificial material and on portions of the backside insulator layer 95in accordance with aspects of the invention. In embodiments, the sealinglayer 305 comprises SiO₂ or SiN, although any suitable sealing materialmay be used within the scope of the invention. The sealing layer 305 maybe formed using, e.g., CVD.

Also shown in FIG. 20, at least one vent hole 310 is formed in thesealing layer 305 to expose the underlying layer 300 of sacrificialmaterial. The vent hole 310 may be formed using conventional processingtechniques, such as photolithographic masking and etching of the sealinglayer 305. The size (e.g., width), shape, location, and/or number ofvent holes 310 may be selected in accordance with design aspectsdescribed herein. In embodiments, the vent hole 310 may have a width ofabout 0.25 to 1.0 microns, although other dimensions may be used withinthe scope of the invention.

As should be understood by those of skill in the art, the width andheight of the vent hole 310 determines the amount of material thatshould be deposited after removing the sacrificial materials to pinchoff the vent hole 310. In general, the amount of material that should bedeposited to pinch off the vent hole 310 decreases as the vent holewidth decreases; and as the vent hole aspect ratio, which is the ratioof the vent hole height to width, increases. In embodiments, forexample, the vent hole 310 is about 3 μm tall and 1 μm wide; althoughother dimensions are also contemplated by the present invention. Inembodiments, the vent hole 310 may be circular or nearly circular, tominimize the amount of subsequent material needed to pinch it off.

In accordance with aspects of the invention, and as shown in FIG. 21,the layer 300 of sacrificial material is removed by a venting process.In embodiments, the vent hole 310 is used for etching the layer 300 ofsacrificial material through the sealing layer 305. For example, whenthe layer 300 of sacrificial material is composed of a polymer material,the vent hole 310 may be used as an access point for an oxygen plasmaetch that removes the layer 300 of sacrificial material. As anotherexample, when the layer 300 of sacrificial material is composed ofsilicon, the vent hole 310 may be used as an access point for a fluorinebased dry etch (e.g., XeF₂ etch) that removes the layer 300 ofsacrificial material. Removal of the layer 300 of sacrificial materialforms a cavity 315 around the SAW device 225.

FIG. 22 shows the formation of a second sealing layer 320 in accordancewith aspects of the invention. In embodiments, the second sealing layer320 is formed on the sealing layer 305 and over the at least one hole310. The second sealing layer 320 plugs the at least one hole 310, suchthat the SAW device 225 is sealed within the combination of the backsideinsulator layer 95, sealing layer 305, and second sealing layer 320. Inthis manner, the SAW device 225 is formed and sealed (e.g.,encapsulated) on the back side 34 of the substrate 10, and is inelectrical contact with devices 25 on the front side 33 by way of firstsubstrate contact 45 a and second substrate contact 45 b. Stillreferring to FIG. 22, an optional layer 325 can also be deposited toprovide a hermetic seal such as, for example, a 500 nm PECVD siliconnitride film or other films that provide a hermetic seal over secondsealing layer 320.

FIGS. 23 and 24 depict additional aspects of the invention. Inparticular, FIG. 23 shows a semiconductor structure 5″″ that hasundergone CMOS processing similar to that described with respect toFIGS. 16, 17, and 19-22. For example, the semiconductor structure 5″″shown in FIG. 23 comprises: a substrate 10 having a front side 33 and abackside 34, devices 25 formed at the front side 33, a SAW device 225formed at the backside 34, a first substrate conductor 45 a electricallyconnecting a first device 25 to a first electrode 235 a of the SAWdevice 225, a second substrate conductor 45 b electrically connecting asecond device 25 to a second electrode 235 a of the SAW device 225, asealing layer 305, and a second sealing layer 320 encapsulating the SAWdevice 225.

As additionally shown in FIG. 23, the semiconductor structure 5″″comprises a third substrate conductor 45 c, which is similar to thefirst substrate conductor 45 a and the second substrate conductor 45 b.In accordance with aspects of the invention, the third substrateconductor 45 c is located outside the footprint of the cavity 315surrounding the SAW device 225.

Still referring to FIG. 23, in embodiments, a bond pad 330 is structuredand arranged at the backside 34 in contact with the conductive material55 of the third substrate conductor 45 c. The bond pad 330 may be formedsimultaneously with the first electrode 235 a and second electrode 235a, e.g., formed using the same material (e.g., Al or Cu) during the samemasking and deposition processes as a the first electrode 235 a andsecond electrode 235 a. As shown in FIG. 23, the bond pad 330 is coveredby the sealing layer 305 and second sealing layer 320 duringencapsulation of the SAW device 225.

As depicted in FIG. 24, an opening 335 is formed through the sealinglayer 305 and second sealing layer 320 to expose a portion of the bondpad 330. The opening 335 may be formed using conventional masking andetching processes. In the manner, the exposed bond pad 330 provides anelectrical contact at the backside 34 for external connections to thechip.

FIG. 25 shows an intermediate structure and respective fabrication stepsin accordance with additional aspects of the present invention. Inparticular, FIG. 25 shows a semiconductor structure 5′″″ that hasundergone CMOS processing similar to the structure shown in FIGS. 1-5.For example, the semiconductor structure 5′″″ of FIG. 25 comprises asubstrate 10, at least one device 25 at a front side 33 of the substrate10, a backside insulator layer 95 at a backside 34 of the substrate 10,and a first substrate conductor 45 a and a second substrate conductor 45b extending from the front side 33 to the backside 34. Each of the firstsubstrate conductor 45 a and second substrate conductor 45 b comprises aconductive material 55 (e.g., a conductive core) surrounded by aninsulator film 50.

As additionally shown in FIG. 25, and in accordance with aspects of theinvention, a sacrificial material 355 is formed in a trench in thebackside insulator layer 95. In embodiments, the sacrificial material355 is composed of a polymer or silicon, although other suitablematerials may be used within the scope of the invention. The sacrificialmaterial 355 may be formed in the backside insulator layer 95 usingconventional processing techniques, such as photolithographic maskingand etching the backside insulator layer 95, and depositing silicon orapplying polymer with a spin-on process. A CMP process may be appliedafter forming the sacrificial material 355 in the backside insulatorlayer 95.

FIG. 26 shows the semiconductor structure 5′″″ after performing CMOSprocessing similar to that described with respect to FIGS. 16, 17, 19,and 20. For example, a SAW device 225 comprising a piezoelectricmaterial 220 is bonded over the sacrificial material 355 using anadhesive 222. The SAW device 225 comprises electrical conductive lines230 connected respectively to first electrode 235 a contacting the firstsubstrate conductor 45 a and a second electrode 235 a contacting thesecond substrate conductor 45 b. A layer 300 of sacrificial material isformed on and around the SAW device 225, and a sealing layer 305 with atleast one vent hole 310 is formed on the layer 300 of sacrificialmaterial. In embodiments, the sacrificial material 355 and the layer 300of sacrificial material are composed of the same material, e.g., siliconor polymer.

In accordance with aspects of the invention, the SAW device 225 does notcover the entire sacrificial material 355. For example, as shown in FIG.27, which is a diagrammatic plan view of FIG. 26, the SAW device 225only covers a portion of the sacrificial material 355, with exposedportions of the sacrificial material 355 extending laterally beside thepiezoelectric material 220.

FIG. 28 shows removal of the layer 300 of sacrificial material and thesacrificial material 355. In embodiments, the vent hole 310 is used foretching the layer 300 of sacrificial material and the sacrificialmaterial 355 through the sealing layer 305, e.g., in a manner similar tothat described with respect to FIG. 21. For example, when the layer 300of sacrificial material and the sacrificial material 355 are bothcomposed of a polymer material, the vent hole 310 may be used as anaccess point for an oxygen plasma etch that removes the layer 300 ofsacrificial material and the sacrificial material 355. As anotherexample, when the layer 300 of sacrificial material and the sacrificialmaterial 355 are both composed of silicon, the vent hole 310 may be usedas an access point for a fluorine based dry etch (e.g., XeF₂ etch) thatremoves the layer 300 of sacrificial material and the sacrificialmaterial 355.

Removal of the layer 300 of sacrificial material and the sacrificialmaterial 355 forms a lower cavity 365 and an upper cavity 315 around theSAW device 225. In embodiments, the SAW device 225 is structurallysupported above the lower cavity 365 by edges of the adhesive 222 andpiezoelectric material 220 resting on the backside insulator layer 95.As depicted in FIG. 29, the second sealing layer 320 and optionalhermetic sealing layer 325 are formed, e.g., in the same manner asdescribed with respect to FIG. 22.

FIG. 30 shows an intermediate structure and respective fabrication stepsin accordance with additional aspects of the present invention. Inparticular, FIG. 30 shows a semiconductor structure 5″″″ that hasundergone CMOS processing similar to the structure shown in FIG. 25. Forexample, the semiconductor structure 5″″″ of FIG. 30 comprises asubstrate 10, at least one device 25 at a front side 33 of the substrate10, a backside insulator layer 95 at a backside 34 of the substrate 10,and a first substrate conductor 45 a and a second substrate conductor 45b extending from the front side 33 to the backside 34. Each of the firstsubstrate conductor 45 a and second substrate conductor 45 b comprises aconductive material 55 (e.g., a conductive core) surrounded by aninsulator film 50. The semiconductor structure 5″″″ of FIG. 30 alsocomprises the sacrificial material 355 formed in a trench in thebackside insulator layer 95.

As additionally shown in FIG. 30, a first electrode 400 is formed on thebackside insulator layer 95, sacrificial material 355, and conductivematerial 55 of the first substrate conductor 45 a. Also, a pad 405 isformed on the conductive material 55 of the second substrate conductor45 b. Furthermore, a piezoelectric material 420 is formed on the firstelectrode 400. The first electrode 400 and pad 405 may be composed ofthe same material (e.g., platinum (Pt) or other suitable electricalconductor) and formed simultaneously in a deposition and patterning(e.g., masking, and etching) process.

The piezoelectric material 420 may be composed of, for example, zincoxide (ZnO), zinc sulfide (ZnS), aluminum nitride (AlN), lithiumtantalate (LiTaO₃) or other members of the lead lanthanum zirconatetitanate family. The piezoelectric material 420 may be formed usingconventional semiconductor processing techniques, such as a sputteringor deposition process to form a blanket (e.g., conformal layer) ofmaterial, and subsequent patterning of the material using conventionalmasking and etching processes.

As depicted in FIG. 31, a second electrode 425 is formed on the pad 405and the top of the piezoelectric material 420. The second electrode 425may comprise any conductive material (e.g., Al) and may be formed usingconventional processing techniques, such as deposition and patterning.Tapered sidewall spacers 427 may optionally be formed prior to thesecond electrode 425. When utilized, the sidewall spacers 427 may beformed in the manner described above with respect to FIG. 17.

In accordance with aspects of the invention, and as should be understoodby one of ordinary skill in the art, the combination of thepiezoelectric material 420, first electrode 400, and second electrode425 constitutes a BAW device 430 (e.g., a band-pass BAW filter). The BAWdevice 430 is provided at the backside 34 of the substrate 10, and iselectrically coupled to at least one device 25 at the front side 33 ofthe substrate by the first substrate conductor 45 a and second substrateconductor 45 b. Furthermore, the BAW device 430 is integrated with thesemiconductor structure 5′″″ at the wafer level, e.g., is completelyformed during CMOS processing, rather than being separately formed andexternally attached to a chip after CMOS processing.

As depicted in FIG. 32, the BAW device 430 may be encapsulated (e.g.,sealed) by forming sealing layer 305, second sealing layer 320, andoptional sealing layer 325 in the manner described above with respect toFIGS. 26-29, including removing the sacrificial material 355 to form alower cavity 365′ between the BAW device 430 and the substrate 10. Asdepicted in FIG. 32, there is also an upper cavity 315′ formed betweenthe BAW device 430 and the sealing layer 305. Alternatively, as depictedin FIG. 33, the BAW device 430 may be encapsulated (e.g., sealed) byfirst removing (e.g., selectively etching) the sacrificial material 355,and then forming attaching a glass plate 250 to the backside insulatorlayer 95 using a spacer 255, e.g., in a manner similar to that describedabove with respect to FIG. 18. This results in a lower cavity 365′between the BAW device 430 and the substrate 10, as well as a cavitybetween the BAW device 430 and the glass plate 250.

FIG. 34 is a flow diagram of a design process used in semiconductordesign, manufacture, and/or test. FIG. 34 shows a block diagram of anexemplary design flow 900 used for example, in semiconductor IC logicdesign, simulation, test, layout, and manufacture. Design flow 900includes processes, machines and/or mechanisms for processing designstructures or devices to generate logically or otherwise functionallyequivalent representations of the design structures and/or devicesdescribed above and shown in FIGS. 1-33. The design structures processedand/or generated by design flow 900 may be encoded on machine-readabletransmission or storage media to include data and/or instructions thatwhen executed or otherwise processed on a data processing systemgenerate a logically, structurally, mechanically, or otherwisefunctionally equivalent representation of hardware components, circuits,devices, or systems. Machines include, but are not limited to, anymachine used in an IC design process, such as designing, manufacturing,or simulating a circuit, component, device, or system. For example,machines may include: lithography machines, machines and/or equipmentfor generating masks (e.g. e-beam writers), computers or equipment forsimulating design structures, any apparatus used in the manufacturing ortest process, or any machines for programming functionally equivalentrepresentations of the design structures into any medium (e.g. a machinefor programming a programmable gate array).

Design flow 900 may vary depending on the type of representation beingdesigned. For example, a design flow 900 for building an applicationspecific IC (ASIC) may differ from a design flow 900 for designing astandard component or from a design flow 900 for instantiating thedesign into a programmable array, for example a programmable gate array(PGA) or a field programmable gate array (FPGA) offered by Altera® Inc.or Xilinx® Inc.

FIG. 34 illustrates multiple such design structures including an inputdesign structure 920 that is preferably processed by a design process910. Design structure 920 may be a logical simulation design structuregenerated and processed by design process 910 to produce a logicallyequivalent functional representation of a hardware device. Designstructure 920 may also or alternatively comprise data and/or programinstructions that when processed by design process 910, generate afunctional representation of the physical structure of a hardwaredevice. Whether representing functional and/or structural designfeatures, design structure 920 may be generated using electroniccomputer-aided design (ECAD) such as implemented by a coredeveloper/designer. When encoded on a machine-readable datatransmission, gate array, or storage medium, design structure 920 may beaccessed and processed by one or more hardware and/or software moduleswithin design process 910 to simulate or otherwise functionallyrepresent an electronic component, circuit, electronic or logic module,apparatus, device, or system such as those shown in FIGS. 1-33. As such,design structure 920 may comprise files or other data structuresincluding human and/or machine-readable source code, compiledstructures, and computer-executable code structures that when processedby a design or simulation data processing system, functionally simulateor otherwise represent circuits or other levels of hardware logicdesign. Such data structures may include hardware-description language(HDL) design entities or other data structures conforming to and/orcompatible with lower-level HDL design languages such as Verilog andVHDL, and/or higher level design languages such as C or C++.

Design process 910 preferably employs and incorporates hardware and/orsoftware modules for synthesizing, translating, or otherwise processinga design/simulation functional equivalent of the components, circuits,devices, or logic structures shown in FIGS. 1-33 to generate a netlist980 which may contain design structures such as design structure 920.Netlist 980 may comprise, for example, compiled or otherwise processeddata structures representing a list of wires, discrete components, logicgates, control circuits, I/O devices, models, etc. that describes theconnections to other elements and circuits in an integrated circuitdesign. Netlist 980 may be synthesized using an iterative process inwhich netlist 980 is resynthesized one or more times depending on designspecifications and parameters for the device. As with other designstructure types described herein, netlist 980 may be recorded on amachine-readable data storage medium or programmed into a programmablegate array. The medium may be a non-volatile storage medium such as amagnetic or optical disk drive, a programmable gate array, a compactflash, or other flash memory. Additionally, or in the alternative, themedium may be a system or cache memory, buffer space, or electrically oroptically conductive devices and materials on which data packets may betransmitted and intermediately stored via the Internet, or othernetworking suitable means.

Design process 910 may include hardware and software modules forprocessing a variety of input data structure types including netlist980. Such data structure types may reside, for example, within libraryelements 930 and include a set of commonly used elements, circuits, anddevices, including models, layouts, and symbolic representations, for agiven manufacturing technology (e.g., different technology nodes, 32 nm,45 nm, 90 nm, etc.). The data structure types may further include designspecifications 940, characterization data 950, verification data 960,design rules 970, and test data files 985 which may include input testpatterns, output test results, and other testing information. Designprocess 910 may further include, for example, standard mechanical designprocesses such as stress analysis, thermal analysis, mechanical eventsimulation, process simulation for operations such as casting, molding,and die press forming, etc. One of ordinary skill in the art ofmechanical design can appreciate the extent of possible mechanicaldesign tools and applications used in design process 910 withoutdeviating from the scope and spirit of the invention. Design process 910may also include modules for performing standard circuit designprocesses such as timing analysis, verification, design rule checking,place and route operations, etc.

Design process 910 employs and incorporates logic and physical designtools such as HDL compilers and simulation model build tools to processdesign structure 920 together with some or all of the depictedsupporting data structures along with any additional mechanical designor data (if applicable), to generate a second design structure 990.

Design structure 990 resides on a storage medium or programmable gatearray in a data format used for the exchange of data of mechanicaldevices and structures (e.g. information stored in a IGES, DXF,Parasolid XT, JT, DRG, or any other suitable format for storing orrendering such mechanical design structures). Similar to designstructure 920, design structure 990 preferably comprises one or morefiles, data structures, or other computer-encoded data or instructionsthat reside on transmission or data storage media and that whenprocessed by an ECAD system generate a logically or otherwisefunctionally equivalent form of one or more of the embodiments of theinvention shown in FIGS. 1-33. In one embodiment, design structure 990may comprise a compiled, executable HDL simulation model thatfunctionally simulates the devices shown in FIGS. 1-33.

Design structure 990 may also employ a data format used for the exchangeof layout data of integrated circuits and/or symbolic data format (e.g.information stored in a GDSII (GDS2), GL1, OASIS, map files, or anyother suitable format for storing such design data structures). Designstructure 990 may comprise information such as, for example, symbolicdata, map files, test data files, design content files, manufacturingdata, layout parameters, wires, levels of metal, vias, shapes, data forrouting through the manufacturing line, and any other data required by amanufacturer or other designer/developer to produce a device orstructure as described above and shown in FIGS. 1-33. Design structure990 may then proceed to a stage 995 where, for example, design structure990: proceeds to tape-out, is released to manufacturing, is released toa mask house, is sent to another design house, is sent back to thecustomer, etc.

The method as described above is used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case, the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims, if applicable, areintended to include any structure, material, or act for performing thefunction in combination with other claimed elements as specificallyclaimed. Moreover, while the invention has been described in terms ofembodiments, those of ordinary skill in the art will recognize that theinvention can be practiced with modifications and in the spirit andscope of the appended claims.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdisclosed herein

What is claimed:
 1. A method, comprising: providing a radio frequency(RF) filter at a backside of a substrate; and forming at least onesubstrate conductor through the substrate, wherein the at least onesubstrate conductor electrically couples the RF filter to at least onedevice at a front side of the substrate, wherein the providing the RFfilter comprises forming a bulk acoustic wave (BAW) filter on thebackside of the substrate, and the at least one substrate conductorcomprises a first through-silicon-via connected to a first electrode ofthe BAW filter and a second through-silicon-via connected to a secondelectrode of the BAW filter.
 2. The method of claim 1, furthercomprising forming an encapsulating seal around the BAW filter at thebackside of the substrate.
 3. The method of claim 2, wherein the formingthe encapsulating seal comprises: forming a spacer ring on the backsideof the substrate around the BAW filter; and bonding a glass plate to thespacer ring, wherein the BAW filter is structured within a cavitydefined by the glass plate and the spacer ring.
 4. The method of claim2, wherein the forming an encapsulating seal comprises: forming asacrificial material on and around the BAW filter; forming a firstsealing layer on the sacrificial material; forming a vent hole in thefirst sealing layer; removing the sacrificial material through the venthole; and forming a second sealing layer on the first sealing layer,wherein the second sealing layer plugs the vent hole; and the BAW filteris structured within a cavity formed by removal of sacrificial materialand defined by the first sealing layer and the second sealing layer. 5.The method of claim 1, further comprising forming a cavity that is: (i)under the BAW filter and (ii) between the BAW filter and the substrate,wherein the cavity is formed in a backside insulator layer on a backsideof the substrate, and each of the first through-silicon-via and thesecond through-silicon-via extends through the backside insulator layer.6. The method of claim 1, wherein the BAW filter is encapsulated in anepoxy or polymer material.
 7. The method of claim 6, further comprising:forming a solder connection between the at least one substrate conductorand an electrode of the BAW filter; and forming a continuous solder ringat the backside of the substrate surrounding the solder connection. 8.The method of claim 1, further comprising: forming an insulator layer onthe front side of the substrate covering the at least one device at thefront side of the substrate; forming contacts in the insulator layer;and forming a backside insulator layer on the backside of the substrate;wherein each of the first through-silicon-via and the secondthrough-silicon-via extends completely through the insulator layer, thesubstrate, and the backside insulator layer, and the first electrode ofthe BAW filter is formed on a surface of the backside insulator layer.9. A method comprising: providing a radio frequency (RF) filter at abackside of a substrate; and forming at least one substrate conductorthrough the substrate, wherein the at least one substrate conductorelectrically couples the RF filter to at least one device at a frontside of the substrate, wherein the providing the RF filter comprisesforming a bulk acoustic wave (BAW) filter on the backside of thesubstrate, and wherein the forming the BAW filter comprises: forming abackside insulator layer on the backside of the substrate; forming afirst electrode on the backside insulator layer and in contact with aconductive material of a first one of the at least one substrateconductor; forming a piezoelectric material on the first electrode; andforming a second electrode on the piezoelectric material and in contactwith a conductive material of a second one of the at least one substrateconductor.
 10. The method of claim 9, further comprising: electricallycoupling the conductive material of the first one of the at least onesubstrate conductor to a first one of the at least one device that isformed on the front side of the substrate; and electrically coupling theconductive material of the second one of the at least one substrateconductor to a second one of the at least one device that is formed onthe front side of the substrate.
 11. A semiconductor structure,comprising: a substrate having a front side and a backside opposite thefront side; a device at the front side of the substrate; a radiofrequency (RF) filter at the backside of the substrate; a firstelectrode at the backside of the substrate and contacting the RF filter;a second electrode at the backside of the substrate and contacting theRF filter; a first substrate conductor extending through the substrateand providing an electrical path between the device and the firstelectrode; and a second substrate contact extending through thesubstrate and electrically connected to the second electrode, whereinthe first substrate conductor comprises a first through-silicon-via thatextends from the front side of the substrate to the backside of thesubstrate, and that contacts the first electrode, and the secondsubstrate conductor comprises a second through-silicon-via that extendsfrom the front side of the substrate to the backside of the substrate.12. The structure of claim 11, wherein the RF filter comprises a bulkacoustic wave (BAW) filter.
 13. The structure of claim 12, wherein theBAW filter comprises a piezoelectric material sandwiched between thefirst electrode and the second electrode.
 14. The structure of claim 12,further comprising: at least one sealing layer encapsulating the BAWfilter at the backside of the substrate; and an air gap between the atleast one sealing layer and the BAW filter.
 15. The structure of claim14, wherein the at least one sealing layer comprises: a first sealinglayer on a same surface as the first electrode; and a second sealinglayer on the first sealing layer and filling at least one gap in thefirst sealing layer.
 16. The structure of claim 12, further comprising:a glass plate encapsulating the BAW filter at the backside of thesubstrate; and an air gap between the glass plate and the BAW filter.17. The structure of claim 12, wherein the BAW filter is encapsulated inan epoxy or polymer material.
 18. The structure of claim 17, wherein thefirst electrode and the second electrode are encapsulated in the epoxyor polymer material, and further comprising: a first solder connectionbetween the first substrate conductor and the first electrode; and asecond solder connection between the second substrate conductor and thesecond electrode.
 19. The structure of claim 18, further comprising acontinuous solder ring at the backside of the substrate surrounding boththe first solder connection and the second solder connection.
 20. Thestructure of claim 11, further comprising: an insulator layer on thefront side of the substrate covering the device at the front side of thesubstrate; contacts in the insulator layer; and a backside insulatorlayer on the backside of the substrate; wherein each of the firstthrough-silicon-via and the second through-silicon-via extendscompletely through the insulator layer, the substrate, and the backsideinsulator layer, the RF filter comprises a bulk acoustic wave (BAW)filter, and the first electrode is formed on a surface of the backsideinsulator layer.